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EMX18 / UMX18N
Transistors
General purpose transistors (dual transistors)
EMX18 / UMX18N
Features 1) Two 2SC5585 chips in a EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. External dimensions (Units : mm)
EMX18
0.22
(4) (5) (6) (3) (2)
1.2 1.6
(1)
0.13
Each lead has same dimensions
ROHM : EMT6 Abbreviated symbol : X18
0.2
Structure Epitaxial planar type NPN silicon transistor
(4)
0.65 1.3 0.65 0.7 0.9
(3)
UMX18N
0.5
0.5 0.5 1.0 1.6 2.0
(5)
(6)
1.25 2.1
0.15
The following characteristics apply to both Tr1 and Tr2.
0~0.1
0.1Min.
Each lead has same dimensions
Equivalent circuit
EMX18 / UMX18N
(3) (2) (1)
ROHM : UMT6 EIAJ : SC-88 Abbreviated symbol : X18
Tr1 Tr2
(4)
(5)
(6)
Absolute maximum ratings (Ta=25C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 15 12 6 500 150 (TOTAL) 150 -55+150 Unit V V V mA mW C C
1
1 120mW per element must not be exceeded.
(1)
(2)
EMX18 / UMX18N
Transistors
Electrical characteristics (Ta=25C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO ICBO IEBO VCE (sat) hFE fT Cob 15 12 6 - - - 270 - - - - - - - 90 - 320 7.5 - - - 0.1 0.1 250 680 - - V V V A A mV - IC=10A IC=1mA IE=10A VCB=15V VEB=6V IC/IB=200mA/10mA VCE=2V, IC=10mA Conditions
MHz VCE=2V, IE=-10mA, f=100MHz PF VCB=10V, IE=0A, f=1MHz
Packaging specifications
Package Code Type EMX18 UMX18N Basic ordering unit (pieces) T2R 8000 Taping TN 3000
Electrical characteristic curves
1000
COLLECTOR CURRENT : IC (mA)
VCE = 2V
1000
Ta = 125C
VCE = 2V
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
1000 500 200 100 50 20 10 5 2 1 Ta = 125C 25C -40C
IC/IB = 20
500
DC CURRENT GAIN : hFE
500 200 100 50 20 10 5 2
25C -40C
200 100 50
25C
10 5 2 1
Ta = 1
-40C
20
25C
0
0.5
1.0
1.5
1
1
2
5
10
20
50 100 200
500 1000
1
2
5
10
20
50 100 200
500 1000
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.1 Grounded emitter propagation characteristics
Fig.2 DC current gain vs. collector current
Fig.3 Collector-emitter saturation voltage vs. collector current ( )
EMX18 / UMX18N
Transistors
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
COLLECTOR SATURATION VOLTAGE : VBE(sat) (mV)
1000 500 200 100 50 20 10 5 2 1 IC/IB = 50 20 10
Ta = 25C
10000 5000 2000 1000 Ta = -40C 25C 125C
IC/IB = 20
1000 VCE = 2V Ta = 25C 200 Pulsed 100 500
fT (MHZ)
500 200 100 50 20 10
50 20 10 5 2 1
1
2
5
10
20
50 100 200
500 1000
1
2
5
10
20
50 100 200
500 1000
1
2
5
10
20
50 100 200
500 1000
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.4 Collector-emitter saturation voltage vs. collector current ( )
Fig.5 Base-emitter saturation voltage vs. collector current
Fig.6
Collector output capacitance Emitter input capacitance vs. base voltage
EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
1000 500 200 100 50 Cib 20 10 5 2 1 Cob
IE = 0A f = 1MHz Ta = 25C
0.1
0.2
0.5
1
2
5
10
20
50
100
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Collector output capacitance vs collector-base voltage Emitter input capacitance vs emitter-base voltage

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